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Part Number
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TGAN25N120FDR |
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Manufacturer
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TRinno |
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Description
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Field Stop Trench IGBT |
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Published
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Jun 17, 2016 |
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Detailed Description
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Features
• 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coeffi...
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Datasheet
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TGAN25N120FDR
|
Overview
Features
• 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • Short Circuit Withstanding Time 5μs • RoHS Compliant • JEDEC Qualification
Applications
UPS, Welder, Inverter, Solar
TGAN25N120FDR
Field Stop Trench IGBT
E GC
Device TGAN25N120FDR
Package TO-3PN
Marking TGAN25N120FDR
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current Pulsed Collector Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Diode Continuous Forward Current Power Dissipation
TC = 100 ℃ TC = 25 ℃ TC = 100 ℃
Operating Junction Temperature
Storage Temperature Range
Maximum ...
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