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TGAN25N120FDR

TRinno
Part Number TGAN25N120FDR
Manufacturer TRinno
Description Field Stop Trench IGBT
Published Jun 17, 2016
Detailed Description Features • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coeffi...
Datasheet PDF File TGAN25N120FDR PDF File

TGAN25N120FDR
TGAN25N120FDR

Overview
Features • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • Short Circuit Withstanding Time 5μs • RoHS Compliant • JEDEC Qualification Applications UPS, Welder, Inverter, Solar TGAN25N120FDR Field Stop Trench IGBT E GC Device TGAN25N120FDR Package TO-3PN Marking TGAN25N120FDR Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Power Dissipation TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES IC ICM IF PD TJ TSTG TL Value 1200 ±20 50 25 75 25 338 135 -55 ~ 150 -55 ~ 150 300 Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature Thermal Characteristics Parameter Maximum ...


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