INCHANGE Semiconductor
isc N-Channel Mosfet
Transistor
isc Product Specification
12N65
·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V (Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.
85Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements
·DESCRITION ·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
650 ±30
V V
ID Drain Current-Continuous
12 A
IDM Drain Current-Single Plused
48 A
PD Total Dissipation @TC=25℃
225 W
Tj Max.
Operating Junction Temperature 150 ℃
Tstg Storage Temperature
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