DatasheetsPDF.com

12N06Z

UNISONIC TECHNOLOGIES
Part Number 12N06Z
Manufacturer UNISONIC TECHNOLOGIES
Description 12A 60V N-CHANNEL POWER MOSFET
Published May 25, 2014
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 12N06Z 12A, 60V N-CHAN NEL POWER MOSFET „ DESCRIPTION 1 Power MOSFET The U TC 12N 06Z i...
Datasheet PDF File 12N06Z PDF File

12N06Z
12N06Z

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 12N06Z 12A, 60V N-CHAN NEL POWER MOSFET „ DESCRIPTION 1 Power MOSFET The U TC 12N 06Z is an N-c hannel enh ancement mode Po wer MOSFET using UT C’ s adva nced te chnology to prov ide customers with a mi nimum on-state res istance, h igh s witching sp eed and low gate charge.
TO-252 „ FEATURES * 12A, 60V, RDS(on) < 0.
10Ω @VGS = 10V * High switching speed * Low gate charge * Halogen Free „ SYMBOL „ ORDERING INFORMATION Package TO-252 S: Source 1 G Pin Assignment 2 3 D S Packing Tape Reel Ordering Number Lead Free Halogen Free 12N06ZL-TN3-R 12N06ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain www.
unisonic.
com.
tw Copyright © 2012 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R502-767.
a http://www.
Datasheet4U.
com 12N06Z „ Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V ID 12 A Continuous T C = 25°C Drain Current Pulsed IDM 48 A Total Dissipation at TC = 25°C PTOT 30 W Peak Diode Recovery dv/dt dv/dt 15 V/ns Avalanche Energy EAS 140 mJ Junction Temperature TJ -55~+175 °C Storage Temperature Range TSTG -55~+175 °C Notes: Absolute ma ximum ratin gs a re those v alues be yond which the d evice c ould be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL CHARACTERISTICS PARAMETER SYMBOL θJA θJC 5 RATINGS 100 UNIT °C/W °C/W Junction to Ambient Max Junction to Case Max „ ELECTRICAL CHARACTERISTICS (TCASE=25°C, unless otherwise specified) MIN 60 1 ±10 1 3 0.
08 0.
1 30 TYP MAX UNIT V µA µA V Ω A pF pF pF 10 2.
5 3.
0 10 35 20 13 12 48 1.
5 nC nC nC ns ns ns ns A A V PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS ID=250μA Drain-Source Breakdown Voltage BVDSS Drain-Source Leakage Current IDSS VDS=60V VGS=±20V Gate- Source Leakage Current Forward IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VDS=10V, ID=...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)