INCHANGE Semiconductor
isc Silicon
PNP Power
Transistors
isc Product Specification
2N6379
DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Power Dissipation
APPLICATIONS ·Designed for use in industrial-military power amplifier
and switching circuit application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-140
V
VCE0
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous
-50 A
IB Base Current-Continuous
-20 A
PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature
250 W -65~200 ℃ -65~200 ℃
isc website：www.
iscsemi.
cn
1 isc & iscsemi i...