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2N6300

Part Number 2N6300
Manufacturer Savantic
Title Silicon NPN Power Transistors
Description ·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier an...
Features Product Specification 2N6300 2N6301 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage 2N6300 2N6301 IC=0.1A ; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=16mA VCEsat-2 Collector-emitter saturation ...

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2N6300 : 2N6300 & 2N6301 NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-500/539 • TO-66 (TO-213AA) Package • Designed for High Gain Amplifier and Medium Speed Switching Applications Rev. V4 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current IC = 100 mA dc; 2N6300 IC = 100 mA dc; 2N6301 VCE = 30 V dc; 2N6300 VCE = 40 V dc; 2N6301 VCE = 60 V dc; VBE = -1.5 V dc; 2N6300 VCE = 80 V dc; VBE = -1.5 V dc; 2N6301 VEB = 5 V dc V(BR)CEO V dc ICEO mA dc ICEX1 .

2N6300 : The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6298 2N6300 60 2N6299 2N6301 80 60 80 5.0 8.0 16 120 75 -65 to +200 2.33 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwis.

2N6300 : TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/539 Devices 2N6300 2N6301 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 00C (1) @ TC = 1000C VCEO VCBO VEBO IB IC PT Operating & Storage Junction Temperature Range TJ, Tstg 1) Derate linearly 0.428 W/0C above TC 00C 2N6300 2N6301 60 80 60 80 5.0 120 8.0 75 32 -55 to +200 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc 2N6300 2N6301 V(BR)CEO.

2N6300 : 2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) DARLINGTON SILICON POWER TRANSISTORS Designed for general purpose amplifier and low frequency switching applications. 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 –Base TO–66 (TO-213AA) Pin 2 –Emitter Case – Collector FEATURES • High DC Current Gain • Monolithic Construction with Built-in Base–Emitter Shunt Resistors ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300 2N6301 VCEO Collec.

2N6301 : 2N6300 & 2N6301 NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-500/539 • TO-66 (TO-213AA) Package • Designed for High Gain Amplifier and Medium Speed Switching Applications Rev. V4 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current IC = 100 mA dc; 2N6300 IC = 100 mA dc; 2N6301 VCE = 30 V dc; 2N6300 VCE = 40 V dc; 2N6301 VCE = 60 V dc; VBE = -1.5 V dc; 2N6300 VCE = 80 V dc; VBE = -1.5 V dc; 2N6301 VEB = 5 V dc V(BR)CEO V dc ICEO mA dc ICEX1 .

2N6301 : The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6298 2N6300 60 2N6299 2N6301 80 60 80 5.0 8.0 16 120 75 -65 to +200 2.33 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwis.

2N6301 : TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/539 Devices 2N6300 2N6301 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 00C (1) @ TC = 1000C VCEO VCBO VEBO IB IC PT Operating & Storage Junction Temperature Range TJ, Tstg 1) Derate linearly 0.428 W/0C above TC 00C 2N6300 2N6301 60 80 60 80 5.0 120 8.0 75 32 -55 to +200 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc 2N6300 2N6301 V(BR)CEO.

2N6301 : ·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage 2N6300 2N6301 VCEO Collector-emitter voltage 2N6300 2N6301 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PA.

2N6301 : 2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) DARLINGTON SILICON POWER TRANSISTORS Designed for general purpose amplifier and low frequency switching applications. 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 –Base TO–66 (TO-213AA) Pin 2 –Emitter Case – Collector FEATURES • High DC Current Gain • Monolithic Construction with Built-in Base–Emitter Shunt Resistors ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300 2N6301 VCEO Collec.

2N6302 : www.DataSheet4U.com 2N6302 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 120V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 16A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(C.

2N6302 : ·With TO-3 package ·Low collector saturation voltage ·High DC current gain @IC=8A APPLICATIONS ·Designed for use in high power audio amplifier applications and high voltage switching regulator circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6302 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature Tc=25 CONDITIONS Open emitter Open base Open collector VALUE 140 140 7 16 20 5 150 150 -65~200 UNIT V V V.

2N6303 : These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO.

2N6303 : .

2N6303 : 2N6303 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 – Emitter TO39 (TO205AD) PINOUTS 2 – Base 3 – Collector Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. VCEO = 120V IC = 0.5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 2/1 (VCE / IC) * Maximum Working Voltage Min..

2N6304 : Designed primarily for use in High Gain, low noise general purpose UHF amplifiers. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 3.5 50 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 200 1.14 mWatts mW/ ºC MSC1323.PDF 10-25-99 2N6304 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cu.

2N6304 : MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (5 T"a = 25°C Derate above 25°C Storage Temperature Symbol VCEO VCBO VEBO ic pd Tstg Value 15 30 3.0 50 200 1.14 -65 to +200 Unit Vdc Vdc Vdc mAdc mW mW/X °C 2N6304 2N6305 CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, In. = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, Ie = 0) Emitter-Base Breakdown Voltage E(l = 0.1 mAdc, Ic = 0) Collector Cutoff Current .




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