SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 500V, ID= 4.
3A Drain-Source ON Resistance : RDS(ON)=1.
4 Qg(typ) = 12nC
(Max) @VGS = 10V
KF5N50DZ/IZ
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
KF5N50DZ
A CD
B
H G
FF
J E
K L
N M
DIM MILLIMETERS A 6.
60 +_ 0.
20 B 6.
10 +_0.
20 C 5.
34 +_ 0.
30 D 0.
70 +_0.
20 E 2.
70 +_ 0.
15 F 2.
30 +_ 0.
10
G 0.
96 MAX
H 0.
90 MAX J 1.
80 +_0.
20 K 2.
30 +_0.
10 L 0.
50 +_ 0.
10 M 0.
50 +_0.
10
N...