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KF5N50DS

KEC
Part Number KF5N50DS
Manufacturer KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published May 13, 2012
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast swit...
Datasheet PDF File KF5N50DS PDF File

KF5N50DS
KF5N50DS


Overview
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 500V, ID= 4.
3A Drain-Source ON Resistance : RDS(ON)=1.
4 (Max) @VGS = 10V Qg(typ) = 12nC trr(typ) = 150ns H G F F KF5N50DR/DS N CHANNEL MOS FIELD EFFECT TRANSISTOR A C K D L B J E N M DIM MILLIMETERS _ 0.
20 A 6.
60 + _ 0.
20 6.
10 + B _ 0.
30 5.
34 + C _ 0.
20 D 0.
70 + _ 0.
15 E 2.
70 + _ 0.
10 2.
30 + F 0.
96 MAX G 0.
90 MAX H _ 0.
20 1.
80 + J _ 0.
10 2.
30 + K _ 0.
10 0.
50 + L _ 0.
10 M 0.
50 + 0.
70 MIN N MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg RATING 500 30 4.
3 2.
7 13 270 8.
6 www.
DataSheet.
co.
kr 1 2 3 UNIT V V 1.
GATE 2.
DRAIN 3.
SOURCE A DPAK (1) mJ mJ V/ns W W/ 20 59.
5 0.
48 150 -55 150 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 2.
1 110 /W /W PIN CONNECTION (KF5N50DR) D (KF5N50DS) D G G S S 2008.
12.
3 Revision No : 0 1/6 Datasheet pdf - http://www.
DataSheet4U.
net/ KF5N50DR/DS ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN.
TYP.
MAX.
UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance ¥Ä BVDSS BVDSS/¥Ä Tj IDSS Vth IGSS RDS(ON) ID=250§Ë , VGS=0V 500 2.
0 0.
55 ¡¾ ¡¾ 1.
10 10 §Ë V nA §Ë §Ù 4.
0 100 10 1.
4 V V/¡É ID=250§Ë , Referenced to 25¡É VDS=500V, VGS=0V, VDS=VGS, I...


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