SEMICONDUCTOR
TECHNICAL DATA
KPS11N65F
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=650V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.
38 @VGS=10V Qg(typ.
)= 28nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
650 30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Dio...