DatasheetsPDF.com

KPS11N65F

KEC
Part Number KPS11N65F
Manufacturer KEC
Description N-Channel MOSFET
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA KPS11N65F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction ...
Datasheet PDF File KPS11N65F PDF File

KPS11N65F
KPS11N65F

Overview
SEMICONDUCTOR TECHNICAL DATA KPS11N65F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=650V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.
38 @VGS=10V Qg(typ.
)= 28nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 650 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 11* 6.
9* 28* 220 4.
9 4.
5 40.
3 0.
32 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 150 Thermal Resistance, Junction-to-Case RthJC 3.
1 Thermal Resistance, Junction-to-Ambient RthJA 62.
5 * : Drain current limited by maximum junction temperature.
UNIT V V A mJ mJ V/ns W W/ /W /W Q AC F O K E LM D NN 123 G B J R H 1.
GATE 2.
DRAIN 3.
SOURCE DIM MILLIMETERS A 10.
16 +_ 0.
2 B 15.
87 +_ 0.
2 C 2.
54 +_ 0.
2 D 0.
8 +_ 0.
1 E 3.
18 +_ 0.
1 F 3.
3 +_ 0.
1 G 12.
57 +_ 0.
2 H 0.
5 +_ 0.
1 J 13.
0 +_ 0.
5 K 3.
23 +_ 0.
1 L 1.
47 MAX M 1.
47 MAX N 2.
54 +_ 0.
2 O 6.
68 +_ 0.
2 Q 4.
7 +_ 0.
2 R 2.
76 +_ 0.
2 *Single Gauge Lead Frame TO-220IS (1) PIN CONNECTION D G 2014 .
11.
05 S Revision No : 1 1/6 KPS11N65F ELECTRICAL CHARACTERISTICS (Tc=25 ) Static CHARACTERISTIC SYMBOL TEST CONDITION Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance Dynamic BVDSS ID=250 A, VGS=0V BVDSS/ Tj ID=250 A, Referenced to 25 IDSS VDS=650V, VGS=0V Vth VDS=VGS, ID=250 A IGSS VGS= 30V, VDS=0V RDS(ON) VGS=10V, ID=5.
5A Total Gate Charge Gate-Source Ch...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)