Part Number
|
2N5551S |
Manufacturer
|
KEC |
Description
|
EPITAXIAL PLANAR NPN TRANSISTOR |
Published
|
Jun 21, 2016 |
Detailed Description
|
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Vo...
|
Datasheet
|
2N5551S
|
Overview
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current.
: ICBO=50nA(Max.
) VCB=120V Low Saturation Voltage : VCE(sat)=0.
2V(Max.
) IC=50mA, IB=5mA Low Noise : NF=8dB (Max.
)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
180
Collector-Emitter Voltage
VCEO
160
Emitter-Base Voltage
VEBO
6
Collector Current
IC 600
Base Current
IB 100
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note : * Package Mounted On 99.
5% Alumina 10 8 0.
6 )
UNIT V V V mA mA mW
2N5551S
EPITAXIAL PLA...
Similar Datasheet