INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector Current- IC= 0.
8A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V(Min)
APPLICATIONS ·Designed for general-purpose switching and linear
amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO VEBO
Collector-Emitter Voltage Emitter-Base Voltage
IC Collector Current-Continuous
IBM Base Current-Peak PC Collector Power Dissipation@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a Thermal Resistance,Junction to Ambient
isc Product Specification
2N2219A
VALUE 75 40 6 0.
8 0.
2 0.
8 150
-65~150
UNIT V V V ...