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2N2218

STMicroelectronics
Part Number 2N2218
Manufacturer STMicroelectronics
Description Silicon Planar Epitaxial NPN transistor
Published May 28, 2005
Detailed Description 2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epi...
Datasheet PDF File 2N2218 PDF File

2N2218
2N2218

Overview
2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases.
They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages.
2N2218/2N2219 approved to CECC 50002100, 2N2221/2N2222 approved to CECC 50002-101 available on request.
TO-39 TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C for 2N2 21 8 and for 2N2 22 1 and at T c as e ≤ 25 °C for 2N2 21 8 and for 2N2 22 1 and Storage Temperature Junction Temperature 2 N22 19 2 N22 22 2 N22 19 2 N22 22 Value 60 30 5 0.
8 0.
8 0.
5 3 1.
8 – 65 to 200 175 Unit V V V A W W W W °C °C 1/5 T st g Tj January 1989 2N2218-2N2219-2N2221-2N2222 THERMAL DATA 2 N22 18 2 N22 19 R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 50 °C/W 187.
5 °C/W 2N 222 1 2N 222 2 83.
3 °C/W 300 °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CBO I E BO V ( BR) CBO Parameter Collector Cutoff Current (I E = 0) Emitter Cutoff Current (I C = 0) Colllector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emittter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain Test Conditions V CB = 50 V V CB = 50 V VE B = 3 V I C = 10 µA I C = 10 mA I E = 10 µA I C = 150 mA I C = 500 mA I C = 150 mA I C = 500 mA I B = 15 mA I B = 50 mA I B = 15 mA I B = 50 mA T am b = 150 °C Min.
Typ.
Max.
10 10 10 Unit nA µA nA V V V 60 30 5 0.
4 1.
6 1.
3 2.
6 20 25 35 ...


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