isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2N3440
DESCRIPTION ·Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = 250 V(Min) ·DC Current Gain-
: hFE = 40(Min) @ IC= 20mA ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
1
A
15
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL C...