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2N3415

NTE
Part Number 2N3415
Manufacturer NTE
Description Silicon NPN Transistor
Published Jul 4, 2020
Detailed Description 2N3415 Silicon NPN Transistor General Purpose Amplifier TO−92 Type Package Absolute Maximum Ratings: (TA = +25C unless...
Datasheet PDF File 2N3415 PDF File

2N3415
2N3415

Overview
2N3415 Silicon NPN Transistor General Purpose Amplifier TO−92 Type Package Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO .
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25V Collector−Base Voltage, VCBO .
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25V Emitter−Base Voltage, VEBO .
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5V Continuous Collector Current, IC .
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500mA Total Device Dissipation (TA = +25C), PD .
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625mW Derate Above 25C .
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5.
0mW/C Operating Junction Temperature Range, TJ .
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−55 to +150C Storage Temperature Range, Tstg .
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−55 to +150C Thermal Resistance, Junction−to−Case, RthJC .
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83.
3C/W Thermal Resistance, Junction−to−Ambient, RthJA .
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200C/W Note 1.
These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
Note 2.
These ratings are based on a maximum junction temperature of 150C.
Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Collector−Emitter Breakdown Voltage Collector−Base Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO IC = 10mA, IB = 0, Note 3 IC = 10A, IE ...


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