isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC3547
DESCRIPTION ·High Current-Gain—Bandwidth Product
fT = 4 GHz TYP.
@ VCE = 10 V,IC = 5 mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV tuner, UHF oscillator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
30
mA
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
15
mA
0.
15
W
125
℃
Tstg
Storage Temperature Range
-55...