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2SC3503

Fairchild Semiconductor
Part Number 2SC3503
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Aug 21, 2014
Detailed Description 2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor March 2008 2SC3503/KSC3503 NPN Epitaxial Silicon Transistor Applica...
Datasheet PDF File 2SC3503 PDF File

2SC3503
2SC3503

Overview
2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor March 2008 2SC3503/KSC3503 NPN Epitaxial Silicon Transistor Applications • Audio, Voltage Amplifier and Current Source • CRT Display, Video Output • General Purpose Amplifier Features • • • • • • High Voltage : VCEO= 300V Low Reverse Transfer Capacitance : Cre= 1.
8pF at VCB = 30V Excellent Gain Linearity for low THD High Frequency: 150MHz Full thermal and electrical Spice models are available Complement to 2SA1381/KSA1381.
1 TO-126 2.
Collector 3.
Base 1.
Emitter Absolute Maximum Ratings* Symbol BVCBO BVCEO BVEBO IC ICP PC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Ta = 25°C unless otherwise noted Parameter Ratings 300 300 5 100 200 7 1.
2 - 55 ~ +150 Units V V V mA mA W W °C Total Device Dissipation, TC=25°C TC=125°C Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Symbol RθJC * Device mounted on minimum pad size Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case Max.
17.
8 Units °C/W hFE Classification Classification hFE C 40 ~ 80 D 60 ~ 120 E 100 ~ 200 F 160 ~ 320 © 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev.
A1 1 www.
fairchildsemi.
com 2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor Electrical Characteristics* Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Cre Parameter Collector-Base Breakdown Voltage Collecto- Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Reverse Transfer Capacitance Test Condition IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCB = 200V, IE = 0 VEB = 4V, IC = 0 VCE = 10V, IC = 10m...


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