isc Silicon
NPN RF
Transistor
DESCRIPTION ·Low Noise and High Gain
NF = 1.
2 dB TYP.
, Ga = 11 dB TYP.
@VCE = 8 V, IC = 7 mA, f = 1.
0 GHz ·High Power Gain MAG = 15dB TYP.
@VCE = 8V, IC = 20 mA, f = 1.
0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV
band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
10
V
VEBO Emitter-Base Voltage
1.
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
65
mA
200
mW
150
℃
Tstg
Storage Temperature Range
...