isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD1173
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 4.
0V(Max.
)@ IC= 3.
0A ·Built-in Damper Diode ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector- Emitter Voltage(VBE= 0)
1500
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
4
A
ICP
Collector Current- Peak
PC
Collector Power Dissipation @ TC...