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2SD1101

Hitachi Semiconductor
Part Number 2SD1101
Manufacturer Hitachi Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description 2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1...
Datasheet PDF File 2SD1101 PDF File

2SD1101
2SD1101

Overview
2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1 2 1.
Emitter 2.
Base 3.
Collector 2SD1101 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 25 20 5 0.
7 1 150 150 –55 to +150 Unit V V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5 — 1 Typ — — — — — — — Max — — — 1.
0 240 0.
5 1.
0 Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 0.
15 A*2 I C = 0.
5 A, IB = 0.
05 A*2 VCE = 1 V, IC = 0.
15 A*2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage V(BR)EBO I CBO hFE* 85 — — VCE(sat) VBE V V Notes: 1.
The 2SD1101 is grouped by h FE as follows.
2.
Pulse test Grade Mark hFE B AB 85 to 170 C AC 120 to 240 See characteristic curves of 2SD467.
2 2SD1101 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 100 50 0 100 150 50 Ambient Temperature Ta (°C) 3 Unit: mm 0.
65 0.
10 3 – 0.
4 + – 0.
05 0.
16 – 0.
06 + 0.
10 1.
5 ± 0.
15 + 0.
2 – 0.
6 0 – 0.
1 0.
95 0.
95 1.
9 ± 0.
2 2.
95 ± 0.
2 0.
3 + 0.
2 1.
1 – 0.
1 0.
65 2.
8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK — Conforms 0.
011 g Cautions 1.
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