High Temperature Silicon Carbide Power
Schottky Diode
Features
650 V
Schottky rectifier 210 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of VF Temperature independent switching behavior Lowest figure of merit QC/IF Available screened to Mil-PRF-19500
Die Datasheet
GB01SHT06-CAL
VRRM IF @ 25 oC
QC
= 650 V = 2.
5 A = 7 nC
Die Size = 0.
9 mm x 0.
9 mm
Advantages
High temperature operation Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Industry’s lowest reverse recovery c...