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GB01SHT06-CAL

GeneSiC
Part Number GB01SHT06-CAL
Manufacturer GeneSiC
Description High Temperature Silicon Carbide Power Schottky Diode
Published Jun 25, 2016
Detailed Description   High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  210 °C maximum operating t...
Datasheet PDF File GB01SHT06-CAL PDF File

GB01SHT06-CAL
GB01SHT06-CAL

Overview
  High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-19500 Die Datasheet GB01SHT06-CAL   VRRM IF @ 25 oC QC = 650 V = 2.
5 A = 7 nC   Die Size = 0.
9 mm x 0.
9 mm Advantages  High temperature operation  Improved circuit efficiency (Lower overall cost)  Low switching losses  Ease of paralleling devices without thermal runaway  Smaller heat sink requirements  Industry’s lowest reverse recovery c...


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