isc N-Channel MOSFET
Transistor
FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·High Voltage.
·High speed power switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
PD
Total Dissipation @TC=25℃
TJ
Max.
Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
400
V
±20
V
3
A
80
W
150
℃
-55~150 ℃
2SK610
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
ELECT...