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2SK601

Panasonic Semiconductor
Part Number 2SK601
Manufacturer Panasonic Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description Silicon MOS FETs (Small Signal) 2SK601 Silicon N-Channel MOS FET For switching unit: mm s Features q Low ON-resistance...
Datasheet PDF File 2SK601 PDF File

2SK601
2SK601

Overview
Silicon MOS FETs (Small Signal) 2SK601 Silicon N-Channel MOS FET For switching unit: mm s Features q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
2.
6±0.
1 4.
5±0.
1 1.
6±0.
2 1.
5±0.
1 0.
4max.
45˚ 1.
0–0.
2 +0.
1 0.
4±0.
08 4.
0–0.
20 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature * 0.
5±0.
08 1.
5±0.
1 3.
0±0.
15 0.
4±0.
04 Symbol VDS VGSO ID IDP PD * Ratings 80 20 ±0.
5 ±1 1 150 −55 to +150 Unit 3 2 1 V V A A W °C °C 1: Gate 2: Drain 3: Source EIAJ: SC-62 Mini-Power Type Package (3-pin) marking Tch Tstg Marking Symbol: O PC board: Copper foil of the drain portion should have a area of 1cm2 or more and the board thickness should be 1.
7mm.
s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Coss ton*2 toff *2 *1 Conditions VDS = 60V, VGS = 0 VGS = 20V, VDS = 0 IDS = 100µA, VGS = 0 ID = 1mA, VDS = VGS ID = 0.
5A, VGS = 10V ID = 0.
2A, VDS = 15V, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz min typ max 10 0.
1 Unit µA µA V 80 1.
5 2 300 45 30 8 15 20 3.
5 4 V Ω mS pF pF pF ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Turn-off time *1 *2 Pulse measurement ton, toff measurement circuit Vout Vin = 10V 68Ω 50Ω VDD = 30V Vin Vout 10% Vin 10% 90% t = 1µS f = 1MHZ 90% V out ton toff 2.
5±0.
1 +0.
25 1 Silicon MOS FETs (Small Signal) PD  Ta 1.
6 1.
2 Copper foil of the drain portion should have a area of 1cm2 or more and the board thickness should be ...


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