isc N-Channel MOSFET
Transistor
FEATURES ·Drain Current –ID=22A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
PD
Total Dissipation @TC=25℃
TJ
Max.
Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
200
V
±20
V
22
A
125
W
150
℃
-55~150 ℃
2SK616
isc website:www.
iscsemi.
com
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