isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Low leakage current ·High forward transfer admittance ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·DC-DC converter,Relay Drive and motor Drive Application
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
10
A
PD
Total Dissipation @TC=25℃
45
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-55~150 ℃ MAX UNIT
Rth j-c Th...