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2SK2903-01MR

Fuji Electric
Part Number 2SK2903-01MR
Manufacturer Fuji Electric
Description N-CHANNEL SILICON POWER MOS-FET
Published Mar 30, 2005
Detailed Description 2SK2903-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low d...
Datasheet PDF File 2SK2903-01MR PDF File

2SK2903-01MR
2SK2903-01MR

Overview
2SK2903-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 2.
54 3.
Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max.
power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 60 ±50 ±200 ±30 720.
8 50 +150 -55 to +150 Unit Equivalent circuit schematic Drain(D) V A A V mJ W °C °C *1 L=0.
384mH, Vcc=24V Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS =60V VGS=0V VGS=±30V VDS=0V ID=40A VGS=10V ID=40A VDS=25V VDS=25V VGS =0V f=1MHz VCC=30V ID=80A VGS=10V RGS=10 Ω L=100 µH Tch=25°C IF=50A VGS=0V Tch=25°C IF=50A VGS=0V -di/dt=100A/µs Tch=25°C 50 1.
0 70 0.
13 1.
5 Min.
60 2.
5 Tch=25°C Tch=125°C Typ.
3.
0 10 0.
2 10 9.
5 40 3100 1300 350 20 85 88 65 Max.
3.
5 500 1.
0 100 12 4650 1950 530 30 120 130 120 Units V V µA mA nA mΩ S pF 20 ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min.
Typ.
Max.
2.
5 62.
5 Units °C/W °C/W 1 2SK2903-01MR Characteristics Power Dissipation PD=f(Tc) 60 10 3 FUJI POWER MOSFET S...


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