isc Silicon
NPN Power
Transistor
BUY55
DESCRIPTION
·
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 125V(Min.
)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.
5V@ IC= 7A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general switching applications at higher outputs.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
150
V
VCES
Collector-Emitter Voltage
150
V
VCEO
Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipatio...