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BUY18S

INCHANGE
Part Number BUY18S
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 25, 2020
Detailed Description isc Silicon NPN Power Transistor BUY18S DESCRIPTION · ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(MIN) ...
Datasheet PDF File BUY18S PDF File

BUY18S
BUY18S

Overview
isc Silicon NPN Power Transistor BUY18S DESCRIPTION · ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(MIN) ·Low Collector Saturation Voltage- : VCE(sat)= 1.
0V@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use switching and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC＜75℃ Tj Junction Temperature 7 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.
08 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)C...


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