isc N-Channel MOSFET
Transistor
FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operatio
DESCRIPTION ·Designed for high voltage, high speed power switching
applications such as switching
regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
PD
Total Dissipation @TC=25℃
TJ
Max.
Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
200
V
±20
V
10
A
80
W
150
℃
-55~150 ℃
THERMAL CHARACTERIST...