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2SK636

N-Channel MOSFET Transistor

Description

isc N-Channel MOSFET Transistor 2SK636 FEATURES ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid ...

Inchange Semiconductor

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