HFD1N60F

HFD1N60F_HFU1N60F Sep 2015 HFD1N60F / HFU1N60F 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 3.7 nC (Typ.) ‰ Extended Safe Operating A...