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HFD1N65S

SemiHow
Part Number HFD1N65S
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFD1N65S / HFU1N65S HFD1N65S / HFU1N65S 650V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Ru...
Datasheet PDF File HFD1N65S PDF File

HFD1N65S
HFD1N65S

Overview
HFD1N65S / HFU1N65S HFD1N65S / HFU1N65S 650V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.
0 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 10.
5 Ω (Typ.
) @VGS=10V April 2009 BVDSS = 650 V RDS(on) typ = 10.
5 Ω ID = 0.
9 A D-PAK I-PAK 2 1 3 HFD1N65S 1 2 3 HFU1N65S 1.
Gate 2.
Drain 3.
Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 0.
9 0.
57 3.
6 ±30 26 0.
9 2.
8 4.
5 PD TJ, TSTG TL Power Dissipation (TA = 25℃) * Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 2.
5 28 0.
22 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol RθJC Junction-to-Case Parameter RθJA Junction-to-Ambient* RθJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ.
---- Max.
4.
53 50 110 Units ℃/W ◎ SEMIHOW REV.
A0,Apr 2009 HFD1N65S / HFU1N65S Electrical Characteristics TC=25 C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 0.
45 A 2.
5 -- Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS /ΔTJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR Gate-Body Leakage Current, Forward Gate-Body Leakage Current, R...


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