SCT30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ.
, TJ = 150 °C) in an HiP247™ package Datasheet - production data Features  Very tight variation of on-resistance vs.
temperature  Very high operating junction temperature capability (TJ = 200 °C)  Very fast and robust intrinsic body diode  Low capacitance Applications Figure 1: Internal schematic diagram  Solar inverters, UPS  Motor drives  High voltage DC-DC converters  Switch mode power supply D(2, TAB) G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.
This results in unsurpassed on-resistance per unit ...

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