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SCT30N120

STMicroelectronics
Part Number SCT30N120
Manufacturer STMicroelectronics
Description Silicon carbide Power MOSFET
Published Jul 3, 2016
Detailed Description SCT30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ = 150 °C) in an HiP247™ package Datasheet - produc...
Datasheet PDF File SCT30N120 PDF File

SCT30N120
SCT30N120

Overview
SCT30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ.
, TJ = 150 °C) in an HiP247™ package Datasheet - production data Features  Very tight variation of on-resistance vs.
temperature  Very high operating junction temperature capability (TJ = 200 °C)  Very fast and robust intrinsic body diode  Low capacitance Applications Figure 1: Internal schematic diagram  Solar inverters, UPS  Motor drives  High voltage DC-DC converters  Switch mode power supply D(2, TAB) G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.
This results in unsurpassed on-resistance per unit ...


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