Part Number
|
IXTH6N80A |
Manufacturer
|
IXYS |
Description
|
Power MOSFET |
Published
|
Jul 13, 2016 |
Detailed Description
|
Standard Power MOSFET
IXTH / IXTM 6N80 IXTH / IXTM 6N80A
N-Channel Enhancement Mode
V DSS
I
D25
R DS(on)
800 V 6 A...
|
Datasheet
|
IXTH6N80A
|
Overview
Standard Power MOSFET
IXTH / IXTM 6N80 IXTH / IXTM 6N80A
N-Channel Enhancement Mode
V DSS
I
D25
R DS(on)
800 V 6 A 1.
8 Ω
800 V 6 A 1.
4 Ω
Symbol
Test Conditions
VDSS V
DGR
VGS VGSM ID25 IDM PD TJ TJM Tstg M
d
Weight
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MΩ
Continuous
Transient
TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C
Mounting torque
Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s
Maximum Ratings
800 V 800 V
±20 V ±30 V
6A 24 A
180 W
-55 .
.
.
+150 150
-55 .
.
.
+150
°C °C °C
1.
13/10 Nm/lb.
in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Symbol
VDSS V
GS(th)
IGSS IDSS
R DS(on)
Test Conditions
Characteristic Values...
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