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IXTH6N80A

IXYS
Part Number IXTH6N80A
Manufacturer IXYS
Description Power MOSFET
Published Jul 13, 2016
Detailed Description Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A N-Channel Enhancement Mode V DSS I D25 R DS(on) 800 V 6 A...
Datasheet PDF File IXTH6N80A PDF File

IXTH6N80A
IXTH6N80A

Overview
Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A N-Channel Enhancement Mode V DSS I D25 R DS(on) 800 V 6 A 1.
8 Ω 800 V 6 A 1.
4 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM PD TJ TJM Tstg M d Weight TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Mounting torque Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s Maximum Ratings 800 V 800 V ±20 V ±30 V 6A 24 A 180 W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 1.
13/10 Nm/lb.
in.
TO-204 = 18 g, TO-247 = 6 g 300 °C Symbol VDSS V GS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
VGS = 0 V, ID = 3 mA V DS = V, GS I D = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.
8 • VDSS VGS = 0 V TJ = 25°C TJ = 125°C V = 10 V, I = 0.
5 I GS D D25 6N80 6N80A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 800 2 V 4.
5 V ±100 nA 250 µA 1 mA 1.
8 Ω 1.
4 Ω TO-247 AD (IXTH) TO-204 AA (IXTM) D (TAB) G = Gate, S = Source, G D = Drain, TAB = Drain Features l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Applications l Switch-mode and resonant-mode power supplies l Motor controls l Uninterruptible Power Supplies (UPS) l DC choppers Advantages l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) l Space savings l High power density IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved 91542E(5/96) 1-4 IXTH 6N80 IXTM 6N80 IXTH 6N80A IXTM 6N80A Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
VDS = 10 V; ID = 0.
5 • ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz 46 2800 250 100 S pF...


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