1N8034-GA
High Temperature Silicon Carbide Power
Schottky Diode
Features
650 V
Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of VF Temperature independent switching behavior Lowest figure of merit QC/IF Available screened to Mil-PRF-19500
Package
RoHS Compliant
VRRM IF (Tc=25°C) QC
= 650 V = 30 A = 66 nC
PIN 1 PIN 2 PIN 3
NC
123
TO – 257 (Isolated Base-plate Hermetic Package)
Advantages
High temperature operation Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without th...