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1N8034-GA

Part Number	1N8034-GA
Manufacturer	GeneSiC
Description	High Temperature Silicon Carbide Power Schottky Diode
Published	Jul 15, 2016
Detailed Description	1N8034-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum op...
Datasheet	1N8034-GA PDF File

Overview

1N8034-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum operating temperature  Electrically isolated base-plate  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-19500 Package  RoHS Compliant VRRM IF (Tc=25°C) QC = 650 V = 30 A = 66 nC PIN 1 PIN 2 PIN 3 NC 123 TO – 257 (Isolated Base-plate Hermetic Package) Advantages  High temperature operation  Improved circuit efficiency (Lower overall cost)  Low switching losses  Ease of paralleling devices without thermal runaway  Smaller heat sink requirements  Industry’s lowest reverse recovery charge  Industry’s lowest device capacitance  Ideal for output switching of power supplies  Best in class reverse leakage current at operating temperature Applications  Down Hole Oil Drilling  Geothermal Instrumentation  Solenoid Actuators  General Purpose High-Temperature Switching  Amplifiers  Solar Inverters  Switched-Mode Power Supply (SMPS)  Power Factor Correction (PFC) Maximum Ratings at Tj = 250 °C, unless otherwise specified Parameter Symbol Conditions Repetitive peak reverse voltage Continuous forward current Continuous forward current RMS forward current Surge non-repetitive forward current, Half Sine Wave Non-repetitive peak forward current I2t value Power dissipation Operating and storage temperature VRRM IF IF IF(RMS) IF,SM IF,max ∫i2 dt Ptot Tj , Tstg TC = 25 °C TC ≤ 225 °C TC ≤ 225 °C TC = 25 °C, tP = 10 ms TC = 25 °C, tP = 10 µs TC = 25 °C, tP = 10 ms TC = 25 °C Values 650 30 9.
4 16 140 650 98 208 -55 to 250 Electrical Characteristics at Tj = 250 °C, unless otherwise specified Parameter Symbol Conditions Diode forward voltage Reverse current Total capacitive charge Switching time Total capacitance VF IF = 10 A, Tj = 25 °C IF = 10 A, Tj = 210 °C IR VR =...

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1N8034-GA High Temperature Silicon Carbide Power Schottky Diode - GeneSiC

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