TSF8N65C
®
TSF8N65C
Pb
Pb Free Plating Product
7.
5A,650V Insulated N-Channel Type Power MOSFETs
Features
■ High ruggedness
■ RDS(on) (Max 1.
0 Ω )@VGS=10V ■ Gate Charge (Typical 48nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
1.
Gate{
{ 2.
Drain
{
◀▲
●
{ 3.
Source
General Description
This N-channel enhancement mode field-effect power
transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
The TO-220F pkg is well suited for adaptor power unit and small power inverter application.
Absolute Maximum Ratings
BVDSS = 650V...