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TSF8N65C

Thinki Semiconductor
Part Number TSF8N65C
Manufacturer Thinki Semiconductor
Description 7.5A 650V Insulated N-Channel Type Power MOSFETs
Published Jul 15, 2016
Detailed Description TSF8N65C ® TSF8N65C Pb Pb Free Plating Product 7.5A,650V Insulated N-Channel Type Power MOSFETs Features ■ High ru...
Datasheet PDF File TSF8N65C PDF File

TSF8N65C
TSF8N65C

Overview
TSF8N65C ® TSF8N65C Pb Pb Free Plating Product 7.
5A,650V Insulated N-Channel Type Power MOSFETs Features ■ High ruggedness ■ RDS(on) (Max 1.
0 Ω )@VGS=10V ■ Gate Charge (Typical 48nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1.
Gate{ { 2.
Drain { ◀▲ ● { 3.
Source General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
The TO-220F pkg is well suited for adaptor power unit and small power inverter application.
Absolute Maximum Ratings BVDSS = 650V RDS(ON) = 1.
0 ohm ID = 7.
5A TO-220F DS G Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Min.
- (Note 1) (Note 2) (Note 1) (Note 3) Value 650 7.
5 4.
6 30 ±30 560 14 4.
5 140 1.
14 - 55 ~ 150 300 Value Typ.
0.
5 - Max.
0.
88 62.
5 Units V A A A V mJ mJ V/ns W W/°C °C °C Units °C/W °C/W °C/W Rev.
05 © 2006 Thinki Semiconductor Co.
, Ltd.
Page 1/6 http://www.
thinkisemi.
com/ TSF8N65C ® Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Off Characteristics BVDSS Drain-Source Breakdown Voltage Δ BVDSS/ Breakdown Voltage Temperature Δ TJ coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage, Forward Gate-source Leakage, Reverse O...


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