HRLP80N06K HRLP80N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 100 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 6.
3 mΩ (Typ.
) @VGS=10V  Lower RDS(ON) : 7.
5 mΩ (Typ.
) @VGS=4.
5V  100% Avalanche Tested Sep 2015 BVDSS = 60 V RDS(on) typ = 6.
3mΩ ID = 80 A TO-220 1 23 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Volta...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)