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HRLP80N06K

SemiHow
Part Number HRLP80N06K
Manufacturer SemiHow
Description N-Channel Trench MOSFET
Published Jul 18, 2016
Detailed Description HRLP80N06K HRLP80N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technol...
Datasheet PDF File HRLP80N06K PDF File

HRLP80N06K
HRLP80N06K

Overview
HRLP80N06K HRLP80N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 100 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 6.
3 mΩ (Typ.
) @VGS=10V  Lower RDS(ON) : 7.
5 mΩ (Typ.
) @VGS=4.
5V  100% Avalanche Tested Sep 2015 BVDSS = 60 V RDS(on) typ = 6.
3mΩ ID = 80 A TO-220 1 23 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25℃) - Derate above 25℃ 60 80 56 260 ±20 340 20 200 1.
33 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 Units V A A A V mJ mJ W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient Typ.
-0.
5 -- Max.
0.
75 -62.
5 Units ℃/W ◎ SEMIHOW REV.
A0,Sep 2015 HRLP80N06K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance Off Characteristics VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 30 A VGS = 4.
5 V, ID = 15 A VDS = 5, ID = 30 A 1.
0 ---- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 ㎂ VDS = 48 V, VGS = 0 V VDS = 48 V, TJ = 125℃ VGS = ±20 V, VDS = 0 V 60 ---- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics VDS = 25 V, VGS = 0 V, f = 1.
0 MHz...


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