General Purpose
Transistor
SS8050-G (
NPN)
RoHS Device
Diagram:
1 : BASE 2 : EMITTER 3 : COLLECTOR
1 Base
Collector 3
2 Emitter
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage
Collector current Collector power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC
RθJA
TJ Tstg
Value 40 25 5 1.
5 300
417
150 -55~+150
Unit V V V A mW
°C/W
°C °C
SOT-23
0.
055(1.
40) 0.
047(1.
20)
0.
041(1.
05) 0.
035(0.
90)
0.
118(3.
00) 0.
110(2.
80)
3
12 0.
079(2.
00) 0.
071(1.
80)
0.
006(0.
15) 0.
003(0.
08)
0.
100(2.
55) 0.
089(2.
25)
0.
020(0.
50) 0.
012(0.
30)
0.
004(0.
10...