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SS8050

SeCoS

NPN Silicon Transistor

Elektronische Bauelemente SS8050 NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specif...


SeCoS

SS8050

File Download Download SS8050 Datasheet


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Elektronische Bauelemente SS8050 NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Complimentary to SS8550  Power Dissipation PCM : 0.3W  Collector Current ICM : 1.5A  Collector - Base Voltage V(BR)CBO : 40V  Operating & Storage junction temperature TJ, TSTG : -55℃ ~ +150℃ MARKING : Y1  Base MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissapation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG Collector   Emitter A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. - 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 RATINGS 40 25 5 1.5 0.3 150, -55~150 UNIT V V V A W ℃ ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency TEST CONDITIONS IC =100µA, IE =0 IC =0.1mA, IB =0 IE =100µA, IC =0 VCB =40V, IE =0 VCB =20V, IE =0 VEB =5V, IC =0 VCE =1V, IC =100mA VCE =1V, IC =800mA IC =800mA, IB =80mA ...




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