Dual N‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.
)
17mΩ
ID 10A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB17A03G
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
ID IDM
10 7 40
Avalanche Current
IAS 12
Avalanche Energy Repetitive Avalanche Energy2
L = 0.
1mH, ID=10A, RG=25Ω
L = 0.
05mH
EAS EAR
5 2.
5
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
PD...