Part Number
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IS43R16160 |
Manufacturer
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Integrated Silicon Solution |
Description
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256Mb Synchronous DRAM |
Published
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Jul 25, 2016 |
Detailed Description
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IS43R16160
32Mx8, 16Mx16 256Mb Synchronous DRAM
FEATURES: • Vdd =Vddq = 2.5V+0.2V (-5, -6, -75)
• Double data rate arc...
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Datasheet
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IS43R16160
|
Overview
IS43R16160
32Mx8, 16Mx16 256Mb Synchronous DRAM
FEATURES: • Vdd =Vddq = 2.
5V+0.
2V (-5, -6, -75)
• Double data rate architecture ; two data transfers per clock cycle.
• Bidirectional , data strobe (DQS) is transmitted/ received with data
• Differential clock input (CLK and /CLK)
• DLL aligns DQ and DQS transitions with CLK transitions edges of DQS
• Commands entered on each positive CLK edge;
• Data and data mask referenced to both edges of DQS
• 4 bank operation controlled by BA0 , BA1 (Bank Address)
• /CAS latency -2.
0 / 2.
5 / 3.
0 (programmable) ; Burst length -2 / 4 / 8 (programmable) Burst type -Sequential / Interleave (programmable)
• Auto precharge/ All bank precharge controll...
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