NTE261 (
NPN) & NTE262 (
PNP) Silicon Complementary
Transistors
Darlington Power Amplifier
Description: The NTE261 (
NPN) and NTE262 (
PNP) are complementary silicon Darlington power
transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.
Features: D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector–Emitter Saturation Voltage:
VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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