Part Number
|
HD830 |
Manufacturer
|
JINGJIAZHEN |
Description
|
500V N-Channel MOSFET |
Published
|
Aug 2, 2016 |
Detailed Description
|
HD830_HU830
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On...
|
Datasheet
|
HD830
|
Overview
HD830_HU830
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 2.
5 A
2.
5 --
Off Characteristics
BVDSS ΔBVDSS
/ΔTJ IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125℃ VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500 -----
--
Dynamic Characteristics
Ciss Input Capacitance ...
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