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HD8205-LOW

HI-DEVICE
Part Number HD8205-LOW
Manufacturer HI-DEVICE
Description N-Channel Enhancement Mode Power MOSFET
Published Mar 23, 2015
Detailed Description HD8205-LOW N-Channel Enhancement Mode Power MOSFET Description The 8205-LOW uses advanced trench technology to provide...
Datasheet PDF File HD8205-LOW PDF File

HD8205-LOW
HD8205-LOW

Overview
HD8205-LOW N-Channel Enhancement Mode Power MOSFET Description The 8205-LOW uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
General Features ● VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.
5V RDS(ON) < 20mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Application ●Battery protection ●Load switch ●Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±10 6 25 1.
5 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) ...


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